OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER

被引：31

作者：

GOKAN, H

ITOH, M

ESHO, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

INTEGRATED CIRCUITS; VLSI - Manufacture - ION BEAMS - OXYGEN;

D O I：

10.1116/1.582911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of acceleration energy and oxygen pressure on the etch selectivity of organic materials over metals and the IBE application to the multilevel resist technique are discussed.

引用

页码：34 / 37

页数：4

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