MOLECULAR-BEAM EPITAXIAL-GROWTH OF III-V COMPOUND SEMICONDUCTOR IN THE PRESENCE OF A LOW-ENERGY ION-BEAM - A MONTE-CARLO SIMULATION STUDY

被引：7

作者：

OGALE, SB ^{[1
]}

MADHUKAR, A ^{[1
]}

THOMSEN, M ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：837 / 839

页数：3

共 24 条

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