LOW-ENERGY SPUTTERING YIELD OF (111) AND (111BAR) FACES OF GAAS

被引:7
作者
COOPER, CB [1 ]
HART, RG [1 ]
RILEY, JC [1 ]
机构
[1] UNIV DELAWARE,PHYS DEPT,NEWARK,DE 19711
关键词
D O I
10.1063/1.1662120
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5183 / 5184
页数:2
相关论文
共 7 条
[1]   ATOM EJECTION STUDIES FOR SPUTTERING OF SEMICONDUCTORS [J].
ANDERSON, GS .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3455-&
[2]   MASS-SPECTROMETRIC STUDY OF SPUTTERING OF SINGLE CRYSTALS OF GAAS BY LOW-ENERGY A IONS [J].
COMAS, J ;
COOPER, CB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2956-&
[3]   SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT [J].
COMAS, J ;
COOPER, CB .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2820-&
[4]   EJECTION PATTERNS IN LOW-ENERGY SPUTTERING OF GAAS AND GAP CRYSTALS [J].
COMAS, J ;
COOPER, CB .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5736-&
[5]   CRYSTALLINE STRUCTURE AND SURFACE REACTIVITY [J].
GATOS, HC .
SCIENCE, 1962, 137 (3527) :311-&
[6]   POLARITY OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].
WHITE, JG ;
ROTH, WC .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) :946-947
[7]   THE SPUTTERING OF COMPOUNDS [J].
WOLSKY, SP ;
ZDANUK, EJ ;
SHOOTER, D .
SURFACE SCIENCE, 1964, 1 (01) :110-118