MASS-SPECTROMETRIC STUDY OF SPUTTERING OF SINGLE CRYSTALS OF GAAS BY LOW-ENERGY A IONS

被引：48

作者：

COMAS, J

COOPER, CB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.1710031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2956 / &

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共 8 条

[1] ATOM EJECTION STUDIES FOR SPUTTERING OF SEMICONDUCTORS [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3455-&

[2] SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT [J].

COMAS, J ;

COOPER, CB .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2820-&

[3] CRYSTALLINE STRUCTURE AND SURFACE REACTIVITY [J].

GATOS, HC .

SCIENCE, 1962, 137 (3527) :311-&

[4]

HONIG RE, 1962, 5TH P INT C ION PHEN, P106

[5] POLARITY OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].

WHITE, JG ;

ROTH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) :946-947

[6] THE SPUTTERING OF COMPOUNDS [J].

WOLSKY, SP ;

ZDANUK, EJ ;

SHOOTER, D .

SURFACE SCIENCE, 1964, 1 (01) :110-118

[7] MASS SPECTROMETRIC STUDY OF NEUTRAL PARTICLES SPUTTERED FROM CU BY 0- TO 100-EV AR IONS [J].

WOODYARD, JR ;

COOPER, CB .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1107-&

[8] SURFACE CLEANING BY CATHODE SPUTTERING [J].

YONTS, OC ;

HARRISON, DE .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1583-1584