FORWARD ELASTIC RECOIL MEASUREMENTS USING HEAVY-IONS

被引：30

作者：

SIEGELE, R

HAUGEN, HK

DAVIES, JA

FORSTER, JS

ANDREWS, HR

机构：

[1] AECL,CHALK RIVER LABS,CHALK RIVER K0J 1J0,ON,CANADA

[2] MCMASTER UNIV,DEPT PHYS & ASTRON,HAMILTON L8S 4M1,ONTARIO,CANADA

[3] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.357284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The application of the elastic recoil detection technique utilizing heavy ions for the analysis of semiconductor samples is demonstrated. With this technique the depth profiles of the primary constituents as well as profiles of all impurities can be measured in one spectrum. Depending on the target material, a depth resolution down to 20 nm can be achieved. All elements except hydrogen can be detected with almost the same sensitivity, namely approximately 1 x 10(15) at/cm2 with 136 MeV I in a 30-degrees recoil geometry. For hydrogen, the sensitivity is about four times better.

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页码：4524 / 4532

页数：9

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