TRANSPORT OF AN OPTICALLY GENERATED ELECTRON-HOLE PLASMA IN A SEMICONDUCTOR SLAB - APPROACH TO STATIONARITY

被引：11

作者：

HELD, T

KUHN, T

MAHLER, G

机构：

[1] Institut F̈r Theoretische Physik, Universität Stuttgart, D-7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.5144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The perpendicular transport of an optically generated ambipolar electron-hole plasma is investigated in a semiconductor slab. Under the condition of high carrier-carrier scattering rates, a hydrodynamical description with heated and displaced Maxwellians is possible. The transition of the system into its stationary state is examined with respect to the validity of an effective one-component approximation. Scattering mechanisms implying different ratios of momentum and energy relaxation rates are found to induce different spatial profiles of hydrodynamical variables. © 1990 The American Physical Society.

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页码：5144 / 5151

页数：8

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