ELECTRON-HOLE SCATTERING IN GAAS QUANTUM WELLS

[1] BALDWIN KGH, UNPUB

[2] TRANSPORT PROPERTIES OF PHOTOEXCITED CARRIERS IN SLIGHTLY COMPENSATED [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (11) : 963 - 966

[3] NEGATIVE PHOTOCONDUCTIVITY OF TWO-DIMENSIONAL HOLES IN GAAS/ALGAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 609 - 611

[4] CONDUCTIVITY RELAXATION-TIME DUE TO ELECTRON-HOLE COLLISIONS IN OPTICALLY-EXCITED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (15): : 7986 - 7992

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[7] FOCH JD, 1970, STUDIES STATISTICAL, V5

[8] Galkin G. N., 1976, Soviet Physics - Collection, V16, P70

[9] GOSSARD AC, 1985, SYNTHETIC MODULATED, P215

[10] GROSS EP, 1959, PHYS FLUIDS, V2, P432

[1] BALDWIN KGH, UNPUB

[2] TRANSPORT PROPERTIES OF PHOTOEXCITED CARRIERS IN SLIGHTLY COMPENSATED [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (11) : 963 - 966

[3] NEGATIVE PHOTOCONDUCTIVITY OF TWO-DIMENSIONAL HOLES IN GAAS/ALGAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 609 - 611

[4] CONDUCTIVITY RELAXATION-TIME DUE TO ELECTRON-HOLE COLLISIONS IN OPTICALLY-EXCITED SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (15): : 7986 - 7992

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[7] FOCH JD, 1970, STUDIES STATISTICAL, V5

[8] Galkin G. N., 1976, Soviet Physics - Collection, V16, P70

[9] GOSSARD AC, 1985, SYNTHETIC MODULATED, P215

[10] GROSS EP, 1959, PHYS FLUIDS, V2, P432