DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1.

被引：94

作者：

DANNHAUSER, F

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90131-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1371 / +

页数：1

共 21 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
BENDA, H
SPENKE, E
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
[2] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[3] COUGHEY DM, 1967, P IEEE LETTERS, V55, P2192
[4] ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM
DAVIES, LW
[J]. NATURE, 1962, 194 (4830) : 762 - &
[5] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[6] Dember H, 1931, PHYS Z, V32, P554
[7] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES
FLETCHER, NH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872
[8] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[9] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 717 - &
[10] HERLET A, 1955, Z ANGEW PHYS, V7, P149