REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS

[1] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 887 - &

[2] BENDA H, TO BE PUBLISHED

[3] BENEKING H, 1965, NACHRICHTENTECHNIK, V15, P333

[4] MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 878 - 881

[5] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &

[6] GENTRY FE, 1964, SEMICONDUCTOR CONTRO, P108

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[8] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[9] DIE ABHANGIGKEIT DER STROMDICHTE EINES P-I-N GLEICHRICHTERS VON DER BREITE SEINER MITTELZONE [J]. ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03): : 335 - 345

[10] HERLET A, 1966, SOLIDSTATE ELECTRONI, V9, P1086

[1] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 887 - &

[2] BENDA H, TO BE PUBLISHED

[3] BENEKING H, 1965, NACHRICHTENTECHNIK, V15, P333

[4] MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 878 - 881

[5] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &

[6] GENTRY FE, 1964, SEMICONDUCTOR CONTRO, P108

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[8] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[9] DIE ABHANGIGKEIT DER STROMDICHTE EINES P-I-N GLEICHRICHTERS VON DER BREITE SEINER MITTELZONE [J]. ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03): : 335 - 345

[10] HERLET A, 1966, SOLIDSTATE ELECTRONI, V9, P1086