SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS

[1] Discharge from hot CaO. [J]. PHYSICAL REVIEW, 1911, 32 (05): : 0492 - 0511

[2] NON-OHMIC BEHAVIOUR IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &

[3] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &

[4] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[5] HERLET A, 1955, Z ANGEW PHYS, V7, P99

[6] HERLET A, 1955, Z ANGEW PHYS, V7, P149

[7] HERLET A, 1955, Z ANGEW PHYS, V7, P195

[8] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 693 - &

[9] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724

[10] JAHNKEEMDE, 1960, TAFELN HOHERER FUNKT

[1] Discharge from hot CaO. [J]. PHYSICAL REVIEW, 1911, 32 (05): : 0492 - 0511

[2] NON-OHMIC BEHAVIOUR IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &

[3] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &

[4] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[5] HERLET A, 1955, Z ANGEW PHYS, V7, P99

[6] HERLET A, 1955, Z ANGEW PHYS, V7, P149

[7] HERLET A, 1955, Z ANGEW PHYS, V7, P195

[8] SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 693 - &

[9] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724

[10] JAHNKEEMDE, 1960, TAFELN HOHERER FUNKT