SWITCHING PROCESSES IN ALLOYED PIN RECTIFIERS

被引：13

作者：

HOFFMAN, A

SPENKE, E

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 08期

关键词：

D O I：

10.1016/0038-1101(65)90037-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：693 / &

相关论文

共 13 条

[1] BENDA H, PRIVATE COMMUNICATIO
[2] NON-OHMIC BEHAVIOUR IN SILICON
DAVIES, EA
GOSLING, DS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &
[3] USE OF P-L-N STRUCTURES IN INVESTIGATIONS OF TRANSIENT RECOMBINATION FROM HIGH INJECTION LEVELS IN SEMICONDUCTORS
DAVIES, LW
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1637 - &
[4] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[5] HERLET A, 1955, Z ANGEW PHYS, V7, P99
[6] HERLET A, 1955, Z ANGEW PHYS, V7, P149
[7] HERLET A, 1955, Z ANGEW PHYS, V7, P195
[8] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE
HOFFMANN, A
SCHUSTER, K
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724
[9] CONDITIONS AT A P-N JUNCTION IN THE PRESENCE OF COLLECTED CURRENT
MIDDLEBROOK, RD
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 555 - 571
[10] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM
PRIOR, AC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180