NON-OHMIC BEHAVIOUR IN SILICON

被引：24

作者：

DAVIES, EA

GOSLING, DS

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(62)90109-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：413 / &

共 8 条

[1]

ARTHUR JB, 1956, J ELECTRON, V2, P145

[2] SCATTERING OF HOT CARRIERS IN GERMANIUM [J].

CONWELL, EM ;

BROWN, AL .

[3]

GUNN JB, 1956, J ELECTRONICS, V2, P87

PRIOR, AC .

[5] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

SATO, H .

[7] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034

STRATTON, R .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 242 (1230) :355-373