LASER-ASSISTED ENGRAVING OF HGCDTE UNDER A LIQUID LAYER

Experimental results are presented on spatially confined damage of HgxCd1-xTe induced by a copper-vapor laser beam under a layer of either a Br-containing liquid or a chemically neutral liquid (H2O, DMFA, DMSO). Engraved grooves have a triangular profile with a minimal width of 5-mu-m. The thickness of the nonstoichiometric layer of s/c is about a few mu-m. Via-holes produced in the s/c under a layer of liquid containing organometallic molecules (soluble compounds of Au, W, Mo) provide the interconnection of two sides of a s/c wafer with a DC resistance of 5-OMEGA at 77 K.