HEAT-TREATMENT STUDIES OF OXYGEN-DEFECT-IMPURITY INTERACTIONS IN SILICON

被引：11

作者：

CLELAND, JW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期

关键词：

D O I：

10.1149/1.2124392

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2127 / 2132

页数：6

共 16 条

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