TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION

被引：106

作者：

NAMIZAKI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：427 / 431

页数：5

共 10 条

[1] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER
BURNS, G
DILL, FH
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &
[2] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[3] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE
MILLER, BI
PINKAS, E
HAYASHI, I
FOY, PW
CAPIK, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 340 - &
[4] NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670
[5] CHARACTERISTICS OF JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS
NAMIZAKI, H
KAN, H
ISHII, M
ITO, A
SUSAKI, W
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) : 1618 - 1623
[6] OPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL AND DIFFUSED GAAS INJECTION LASERS
PILKUHN, MH
RUPPRECH.H
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 5 - &
[7] STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS - MODE STRUCTURE AND CW OPERATION ABOVE ROOM TEMPERATURE
RIPPER, JE
DYMENT, JC
DASARO, LA
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (04) : 155 - &
[8] THRESHOLD CURRENT DENSITY IN SOLUTION-GROWN GAAS LASER DIODES
SUSAKI, W
OKU, T
SOGO, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1967, QE 3 (07) : 332 - &
[9] THRESHOLD CURRENT-DENSITY AND LASING TRANSVERSE MODE IN A GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASER
YONEZU, H
KOBAYASHI, K
SAKUMA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1593 - 1599
[10] GAUSSIAN BEAMS FROM GAAS JUNCTION LASERS
ZACHOS, TH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 318 - &

← 1 →