LONG-LIVED RESONANCE STATES IN N-DOPED ALGAAS

被引:25
作者
HJALMARSON, HP
DRUMMOND, TJ
机构
关键词
D O I
10.1103/PhysRevLett.60.2410
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2410 / 2413
页数:4
相关论文
共 32 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[3]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[4]   CAPTURE AND EMISSION OF ELECTRONS BY THE RESONANT STATE STRONGLY COUPLED TO THE LATTICE IN N-INSB [J].
DMOWSKI, L ;
BAJ, M ;
IOANNIDES, P ;
PIOTRZKOWSKI, R .
PHYSICAL REVIEW B, 1982, 26 (08) :4495-4506
[5]  
Drummond T., UNPUB
[6]  
FARMER JW, 1988, MRS S P, V104
[7]   THERMAL CAPTURE OF ELECTRONS IN SILICON [J].
GUMMEL, H .
ANNALS OF PHYSICS, 1957, 2 (01) :28-56
[8]   NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].
Henning, J.C.M. ;
Ansems, J.P.M. .
Semiconductor Science and Technology, 1987, 2 (01) :1-13
[9]  
HENNING JCM, 1986, J PHYS C, V19, pL355
[10]   DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].
HJALMARSON, HP ;
DRUMMOND, TJ .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658