共 43 条
[1]
ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:918-923
[5]
PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
[J].
PHYSICAL REVIEW,
1965, 137 (1A)
:A245-&
[7]
METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
1986, 4 (03)
:965-968
[9]
HELLWEGE KH, 1984, LANDOLTBORNSTEIN, V17
[10]
TRANSITION-METALS ON GAAS(110) - A CASE FOR EXTRINSIC SURFACE-STATES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:924-930