ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)

被引:46
作者
CHIN, KK
PAN, SH
MO, D
MAHOWALD, P
NEWMAN, N
LINDAU, I
SPICER, WE
机构
来源
PHYSICAL REVIEW B | 1985年 / 32卷 / 02期
关键词
D O I
10.1103/PhysRevB.32.918
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:918 / 923
页数:6
相关论文
共 30 条
  • [1] [Anonymous], 1980, ELECT STRUCTURE PROP
  • [2] THE AG-INP(110) INTERFACE - PHOTOEMISSION-STUDIES OF INTERFACIAL REACTIONS AND SCHOTTKY-BARRIER FORMATION
    BABALOLA, IA
    PETRO, WG
    KENDELEWICZ, T
    LINDAU, I
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6614 - 6622
  • [3] ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE
    BOLMONT, D
    CHEN, P
    PROIX, F
    SEBENNE, CA
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16): : 3639 - 3648
  • [4] Carlson T A, 1976, Photoelectron and auger spectroscopy, P337
  • [5] DIELECTRIC RESPONSE OF ARBITRARY SURFACES AND SIZE QUANTIZED METALS
    CINI, M
    [J]. SURFACE SCIENCE, 1977, 62 (01) : 148 - 164
  • [6] DONIACH S, MANY ELECTRON EFFECT
  • [7] HARRISON WA, COMMUNICATION
  • [8] HARRISON WA, 1980, ELECTRONIC STRUCTURE, P495
  • [9] KENDELEWICZ T, UNPUB
  • [10] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
    LUDEKE, R
    CHIANG, TC
    MILLER, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 581 - 587