ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)

被引：46

作者：

CHIN, KK

PAN, SH

MO, D

MAHOWALD, P

NEWMAN, N

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.918

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：918 / 923

页数：6

共 30 条

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