UNIFIED DEFECT MODEL AND BEYOND

被引：697

作者：

SPICER, WE

LINDAU, I

SKEATH, P

SU, CY

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1019 / 1027

页数：9

共 67 条

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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 911 - 915
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[5] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581
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[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
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[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[8] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
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[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[9] CHADI DJ, 1978, PHYS REV LETT, V41, P1962
[10] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926

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