IS 1ST COMPOUND NUCLEATION AT METAL - SEMICONDUCTOR INTERFACES AN ELECTRONICALLY INDUCED INSTABILITY

被引：14

作者：

BENE, RW ^{[1
]}

WALSER, RM ^{[1
]}

LEE, GS ^{[1
]}

CHEN, KC ^{[1
]}

机构：

[1] UNIV TEXAS,ELECTR RES CTR,AUSTIN,TX 78712

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：911 / 915

页数：5

共 13 条

[1] Bene R. W., 1979, Physics of Semiconductors 1978, P773
[2] EFFECT OF A GLASSY MEMBRANE ON SCHOTTKY-BARRIER BETWEEN SILICON AND METALLIC SILICIDES
BENE, RW
WALSER, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 925 - 929
[3] BENE RW, 1978, P S THIN FILM PHENOM, P21
[4] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING
BORDERS, JA
PICRAUX, ST
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231
[5] SOME STRUCTURAL, ELECTRICAL AND OPTICAL INVESTIGATIONS ON A NEW AMORPHOUS MATERIAL - FESI2
GESERICH, HP
SHARMA, SK
THEINER, WA
[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (04): : 1001 - 1007
[6] DIFFUSION IN AMORPHOUS PHASE OF PD-19-AT PERCENT-SI METALLIC ALLOY
GUPTA, D
TU, KN
ASAI, KW
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (12) : 796 - 799
[7] SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION
KRAUTLE, H
NICOLET, MA
MAYER, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : K33 - K36
[8] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES
KRAUTLE, H
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308
[9] STRUCTURAL STUDIES OF THIN NICKEL FILMS ON SILICON SURFACES
SCHAFFER, WJ
BENE, RW
WALSER, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1325 - 1331
[10] AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN EVAPORATED FESI FILMS
SHARMA, SK
GESERICH, HP
THEINER, WA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 467 - 474