SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION

被引：19

作者：

KRAUTLE, H ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 20卷 / 01期

关键词：

D O I：

10.1002/pssa.2210200152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K33 / K36

页数：4

共 13 条

[1] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823
[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
BOWER, RW
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
[3] CHU WK, 1973, SEMICONDUCTOR SILICO
[4] INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS
DROBEK, J
SUN, RC
TISONE, TC
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01): : 243 - +
[5] ELLIOTT RP, 1965, CONSTITUTION BINAR S, P5430
[6] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE
HIRAKI, A
LUGUJJO, E
NICOLET, MA
MAYER, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 401 - &
[7] KRAUTLE H, 1973, FEB IND ASS C
[8] LAU SS, PRIVATE COMMUNICATIO
[9] MEYER O, 1973, VERHANDL DPG, V3, P517
[10] DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM
NARUSAWA, T
KOMIYA, S
HIRAKI, A
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 389 - 390