UNIFIED DEFECT MODEL AND BEYOND

[61] WIEDER HH, 1979, 50 I PHYS C SER

[62] METAL CONTACTS TO SILICON AND INDIUM-PHOSPHIDE CLEAVED SURFACES AND THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1418 - 1421

[63] CLEAVED SURFACES OF INDIUM-PHOSPHIDE AND THEIR INTERFACES WITH METAL-ELECTRODES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (22): : 4545 - 4557

[64] INITIAL OXIDATION AND OXIDE SEMICONDUCTOR INTERFACE FORMATION ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1434 - 1438

[65] WILMSEN CW, 1979, 50 I PHYS C SER

[66] MECHANISM OF OXIDE FILM GROWTH ON GAAS BY PLASMA ANODIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 959 - 963

[67] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211

[61] WIEDER HH, 1979, 50 I PHYS C SER

[62] METAL CONTACTS TO SILICON AND INDIUM-PHOSPHIDE CLEAVED SURFACES AND THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1418 - 1421

[63] CLEAVED SURFACES OF INDIUM-PHOSPHIDE AND THEIR INTERFACES WITH METAL-ELECTRODES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (22): : 4545 - 4557

[64] INITIAL OXIDATION AND OXIDE SEMICONDUCTOR INTERFACE FORMATION ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1434 - 1438

[65] WILMSEN CW, 1979, 50 I PHYS C SER

[66] MECHANISM OF OXIDE FILM GROWTH ON GAAS BY PLASMA ANODIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 959 - 963

[67] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211