INITIAL OXIDATION AND OXIDE SEMICONDUCTOR INTERFACE FORMATION ON GAAS

[1] BREEZE PA, UNPUBLISHED

[2] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926

[3] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[4] CROSET M, 1977, 7TH P INT VAC C 3RD

[5] CZANDERNA AW, 1975, METHODS SURFACE ANAL, P108

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] GALLIUM OXIDE THIN-FILM BY REACTIVE VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 841 - 842

[8] GALLIUM ARSENIDE ELECTRODE BEHAVIOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 472 - &

[9] MIZOKAWA Y, 1977, 7TH P INT VAC C 3RD

[10] THE OXIDATION OF INTERMETALLIC COMPOUNDS .1. HIGH TEMPERATURE OXIDATION OF INSB [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) : 1135 - 1142

[1] BREEZE PA, UNPUBLISHED

[2] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926

[3] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[4] CROSET M, 1977, 7TH P INT VAC C 3RD

[5] CZANDERNA AW, 1975, METHODS SURFACE ANAL, P108

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] GALLIUM OXIDE THIN-FILM BY REACTIVE VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 841 - 842

[8] GALLIUM ARSENIDE ELECTRODE BEHAVIOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) : 472 - &

[9] MIZOKAWA Y, 1977, 7TH P INT VAC C 3RD

[10] THE OXIDATION OF INTERMETALLIC COMPOUNDS .1. HIGH TEMPERATURE OXIDATION OF INSB [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) : 1135 - 1142