THE EFFECT OF DOPING ON FERMI LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE

被引：17

作者：

ZUR, A

MCGILL, TC

SMITH, DL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：608 / 609

页数：2

共 8 条

[1] BAUER RS, 1982, 2ND P TRIEST IUPAP S
[2] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
DAW, MS
SMITH, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1028 - 1031
[3] METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[4] SURFACE DONORS AND ACCEPTORS ON GAAS AND INP EXPOSED TO OXYGEN
NEDOLUHA, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 429 - 433
[5] NEDOLUHA AK, COMMUNICATION
[6] UNIFIED DEFECT MODEL AND BEYOND
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
[7] ZUR A, 1983, SURF SCI
[8] ZUR A, UNPUB PHYS REV B