ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE

被引：51

作者：

BOLMONT, D

CHEN, P

PROIX, F

SEBENNE, CA

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 16期

关键词：

D O I：

10.1088/0022-3719/15/16/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3639 / 3648

页数：10

共 16 条

[1] ELECTRONIC-PROPERTIES OF THE ANNEALED INTERFACE BETWEEN AG AND 7X7 SI(111) [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22) :3313-3319

[2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

PHYSICAL REVIEW B, 1981, 24 (08) :4552-4559

[3]

BOLMONT D, 1982, SURF SCI

[4] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[5] ELUCIDATION OF SURFACE-STRUCTURE AND BONDING BY PHOTOELECTRON-SPECTROSCOPY [J].

BRUNDLE, CR .

SURFACE SCIENCE, 1975, 48 (01) :99-136

[6] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1978, 18 (04) :1800-1812

[7] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161

[8] SILVER CONTACT ON GAAS (001) AND INP (001) [J].

MASSIES, J ;

DEVOLDERE, P ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1353-1357

[9] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES [J].

MASSIES, J ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :25-38

[10] FERMI LEVEL PINNING ON (110) GAAS-SURFACES STUDIED BY CPD AND SPV TOPOGRAPHIES [J].

PALAU, JM ;

TESTEMALE, E ;

LASSABATERE, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :192-200

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