FERMI LEVEL PINNING ON (110) GAAS-SURFACES STUDIED BY CPD AND SPV TOPOGRAPHIES

被引:40
作者
PALAU, JM
TESTEMALE, E
LASSABATERE, L
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 02期
关键词
Compendex;
D O I
10.1116/1.571103
中图分类号
O59 [应用物理学];
学科分类号
摘要
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码:192 / 200
页数:9
相关论文
共 34 条
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