INFLUENCE OF SUBSTRATE ORIENTATION ON SURFACE SEGREGATION PROCESS IN SILICON-MBE

被引：50

作者：

NAKAGAWA, K ^{[1
]}

MIYAO, M ^{[1
]}

SHIRAKI, Y ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,TOKYO 153,JAPAN

来源：

关键词：

D O I：

10.1016/0040-6090(89)90456-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 322

页数：8

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BEAN, JC .

[2] MBE-RELATED SURFACE SEGREGATION OF DOPANT ATOMS IN SILICON [J].

NAKAGAWA, K ;

MIYAO, M ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2013-L2014

SAKAMOTO, T ;

KAWANAMI, H .

[4] CONTROLLED ATOMIC LAYER DOPING AND ALD-MOSFET FABRICATION IN SI [J].

VANGORKUM, AA ;

NAKAGAWA, K ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L1933-L1936