METALLIZED ELECTRON-HOLE DROPLETS IN STRAINED SI AND GE

被引：55

作者：

VASHISHTA, P

BHATTACHARYYA, P

SINGWI, KS

机构：

[1] ARGONNE NATL LAB, ARGONNE, IL 60439 USA

[2] NORTHWESTERN UNIV, PHYS DEPT, EVANSTON, IL 60201 USA

来源：

关键词：

D O I：

10.1103/PhysRevLett.30.1248

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1248 / 1251

页数：4

共 15 条

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