DEPTH RESOLUTION IN SIMS STUDY OF BORON DELTA-DOPING IN EPITAXIAL SILICON

被引：9

作者：

DUPUY, JC ^{[1
]}

PRUDON, G ^{[1
]}

DUBOIS, C ^{[1
]}

WARREN, P ^{[1
]}

DUTARTRE, D ^{[1
]}

机构：

[1] CNET,CNS,F-38243 MEYLAN,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95848-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microelectronic needs accurate analysis of very thin layers as delta doped structures. By secondary ion mass spectrometry (SIMS) with O2+ ion beam, we analyse mono-delta of boron in silicon located at 30 nm under the surface and then a multi-delta of boron in silicon located just under the surface (almost-equal-to 10 nm). For the mono-delta, we study modifications of the SIMS profiles within the projected range of primary ion beam R(p). From the dependence of FWHM within R(p), we deduce the real thickness of pseudo-delta thin layers by assuming a convolution process for SIMS measurements. This assumption is well confirmed by the analysis of a boron tri-delta doped layers.

引用

页码：379 / 382

页数：4

共 9 条

[1] THEORETICAL AND EXPERIMENTAL STUDIES OF THE BROADENING OF DILUTE DELTA-DOPED SI SPIKES IN GAAS DURING SIMS DEPTH PROFILING [J].