MEASUREMENT OF NARROW SI DOPANT DISTRIBUTIONS IN GAAS BY SIMS

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] ARMOUR DG, 1988, 6 P SIMS, P399

[3] MIGRATION OF SI IN DELTA-DOPED GAAS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 612 - 615

[4] BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P783

[5] BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P1121

[6] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[7] DEPTH PROFILING OF SHALLOW ARSENIC IMPLANTS IN SILICON USING SIMS [J]. SURFACE AND INTERFACE ANALYSIS, 1987, 10 (07) : 332 - 337

[8] Crank J., 1975, MATH DIFFUSION, P11

[9] SIMS ANALYSIS, UNDER CESIUM BOMBARDMENT, OF SI IN GAAS (AL, GA)AS SUPERLATTICES - DETECTION LIMIT AND DEPTH RESOLUTION [J]. SURFACE AND INTERFACE ANALYSIS, 1988, 11 (11) : 545 - 552

[10] GRATTEPAIN C, 1988, 3RD INT C SHALL IMP

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] ARMOUR DG, 1988, 6 P SIMS, P399

[3] MIGRATION OF SI IN DELTA-DOPED GAAS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 612 - 615

[4] BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P783

[5] BENNINGHOVEN A, 1987, SECONDARY ION MASS S, P1121

[6] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[7] DEPTH PROFILING OF SHALLOW ARSENIC IMPLANTS IN SILICON USING SIMS [J]. SURFACE AND INTERFACE ANALYSIS, 1987, 10 (07) : 332 - 337

[8] Crank J., 1975, MATH DIFFUSION, P11

[9] SIMS ANALYSIS, UNDER CESIUM BOMBARDMENT, OF SI IN GAAS (AL, GA)AS SUPERLATTICES - DETECTION LIMIT AND DEPTH RESOLUTION [J]. SURFACE AND INTERFACE ANALYSIS, 1988, 11 (11) : 545 - 552

[10] GRATTEPAIN C, 1988, 3RD INT C SHALL IMP