SIMS ANALYSIS, UNDER CESIUM BOMBARDMENT, OF SI IN GAAS (AL, GA)AS SUPERLATTICES - DETECTION LIMIT AND DEPTH RESOLUTION

被引：9

作者：

GAUNEAU, M ^{[1
]}

CHAPLAIN, R ^{[1
]}

REGRENY, A ^{[1
]}

SALVI, M ^{[1
]}

GUILLEMOT, C ^{[1
]}

AZOULAY, R ^{[1
]}

DUHAMEL, N ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,PAB OMC,F-92220 BAGNEUX,FRANCE

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 11卷 / 11期

关键词：

D O I：

10.1002/sia.740111102

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：545 / 552

页数：8

共 19 条

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[2] SIMS ANALYSIS OF ALXGA1-XAS GAAS LAYERED STRUCTURES GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY
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[J]. SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 303 - 308
[3] USE OF A FAST ATOM BEAM IN ION MICROSCOPY (FABIM) FOR ANALYSIS OF POORLY CONDUCTING MATERIALS
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[4] DEPTH RESOLUTION OF SPUTTER PROFILING INVESTIGATED BY COMBINED AUGER-X-RAY ANALYSIS OF THIN-FILMS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 395 - 398
[5] RESIDUAL SULFUR AND SILICON DOPING IN INP AND GAINAS
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COQUILLE, R
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GRANDPIERRE, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 76 (01) : 128 - 134
[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS
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FOXON, CT
JOYCE, BA
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 237 - 241
[8] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN GAAS-GA1-XALXAS MODULATION-DOPED QUANTUM-WELLS
GUILLEMOT, C
BAUDET, M
GAUNEAU, M
REGRENY, A
PORTAL, JC
[J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2799 - 2807
[9] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110
[10] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
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SAKAKI, H
YOSHINO, J
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 973 - 975

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