SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：56

作者：

ACHTNICH, T ^{[1
]}

BURRI, G ^{[1
]}

PY, MA ^{[1
]}

ILEGEMS, M ^{[1
]}

机构：

[1] UNIV LAUSANNE,INST EXPTL PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.97730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1730 / 1732

页数：3

共 6 条

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

KAMADA, M ;

TAIRA, K ;

ARAI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2833-2836

[2] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAWSON, P ;

WOODBRIDGE, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1227-1229

[3] OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY [J].

MCAFEE, SR ;

LANG, DV ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :520-522

[4] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

MILLER, RC ;

TSANG, WT ;

MUNTEANU, O .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376

[5] COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

NOTTENBURG, R ;

BUHLMANN, HJ ;

FREI, M ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :71-73

[6] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219

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