PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY

[1] AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236

[2] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 922 - 924

[3] NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 95 - 118

[4] THE GASEOUS SPECIES OF THE AL-AL2O3 SYSTEM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (11) : 5308 - 5314

[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492

[6] THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 703 - 703

[7] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 52 - 53

[8] HERZBERG G, 1959, MOL SPECTRA MOL STRU

[9] FORMATION, STABILITY AND CRYSTAL STRUCTURE OF THE SOLID ALUMINUM SUBOXIDES - AL2O AND ALO [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1954, 76 (09) : 2560 - 2561

[10] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .1. LUMINESCENCE OF THE CONSTITUENT ALXGA1-XAS BARRIER AND GAAS WELL MATERIAL [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (01): : 9 - 17

[1] AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236

[2] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 922 - 924

[3] NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 95 - 118

[4] THE GASEOUS SPECIES OF THE AL-AL2O3 SYSTEM [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (11) : 5308 - 5314

[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492

[6] THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 703 - 703

[7] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1976, 12 (02) : 52 - 53

[8] HERZBERG G, 1959, MOL SPECTRA MOL STRU

[9] FORMATION, STABILITY AND CRYSTAL STRUCTURE OF THE SOLID ALUMINUM SUBOXIDES - AL2O AND ALO [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1954, 76 (09) : 2560 - 2561

[10] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .1. LUMINESCENCE OF THE CONSTITUENT ALXGA1-XAS BARRIER AND GAAS WELL MATERIAL [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (01): : 9 - 17