NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE

Deep level transient spectroscopy (DLTS) measurements have been performed on a variety of Al//xGa//1// minus //xAs p-n junctions prior to and following a series of fast neutron irradiations at room temperature and subsequent isochronal anneals. In contrast with electron and proton irradiated GaAs, neutron irradiation produces a single, broad featureless DLTS band which is a majority carrier trap in both n and p type material. The characteristics of this neutron-induced trap are relatively independent of growth method, dopant type and concentration.