EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS

被引：29

作者：

HASEGAWA, F ^{[1
]}

MAJERFELD, A ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 02期

关键词：

D O I：

10.1049/el:19760042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：52 / 53

页数：2

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[1] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[2] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS
HASEGAWA, F
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288
[3] HASEGAWA F, TO BE PUBLISHED
[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[5] LANG DV, COMMUNICATION
[6] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS
MIRCEA, A
MITONNEAU, A
[J]. APPLIED PHYSICS, 1975, 8 (01): : 15 - 21