SIMS ANALYSIS OF ALXGA1-XAS GAAS LAYERED STRUCTURES GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY

[1] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 338 - 345

[2] ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 49 - 52

[3] DE A. J., UNPUB

[4] FINCK JCJ, 1980, PHILIPS TECH REV, V39, P37

[5] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[6] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1983, 55 (13) : 2051 - 2055

[7] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[8] Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406

[9] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436

[10] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342

[1] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 338 - 345

[2] ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 49 - 52

[3] DE A. J., UNPUB

[4] FINCK JCJ, 1980, PHILIPS TECH REV, V39, P37

[5] MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L574 - L576

[6] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1983, 55 (13) : 2051 - 2055

[7] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[8] Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406

[9] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436

[10] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342