ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE

被引：8

作者：

BOUDEWIJN, PR

AKERBOOM, HWP

BULLELIEUWMA, CWT

HAISMA, J

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1985年 / 7卷 / 01期

关键词：

D O I：

10.1002/sia.740070110

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：49 / 52

页数：4

相关论文

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