SOLID-PHASE EPITAXY OF SILICON ON GALLIUM-PHOSPHIDE

[1] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[2] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1037 - 1039

[3] DEJONG T, J VAC SCI TECHNOL

[4] OOSTING PH, UNPUB COMMUNICATION

[5] GROWTH OF DISLOCATION-FREE GAP CRYSTALS FROM A STOICHIOMETRIC MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) : 6 - 12

[6] VIEGERS MPA, UNPUB COMMUNICATION

[7] EFFECT OF DISLOCATION LOOPS IN MACROSCOPICALLY DISLOCATION-FREE GAP SUBSTRATES ON PERFECTION OF HOMO-EPITACTIC DEPOSITS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 632 - 638

[8] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 534 - 539

[9] WRIGHT SL, 1982, ECE8203 U CAL REP

[1] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[2] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1037 - 1039

[3] DEJONG T, J VAC SCI TECHNOL

[4] OOSTING PH, UNPUB COMMUNICATION

[5] GROWTH OF DISLOCATION-FREE GAP CRYSTALS FROM A STOICHIOMETRIC MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) : 6 - 12

[6] VIEGERS MPA, UNPUB COMMUNICATION

[7] EFFECT OF DISLOCATION LOOPS IN MACROSCOPICALLY DISLOCATION-FREE GAP SUBSTRATES ON PERFECTION OF HOMO-EPITACTIC DEPOSITS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 632 - 638

[8] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 534 - 539

[9] WRIGHT SL, 1982, ECE8203 U CAL REP