SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE

被引：17

作者：

DEJONG, T

DOUMA, WAS

VANDERVEEN, JF

SARIS, FW

HAISMA, J

机构：

[1] FOM,INST ATOM & MOLEC PHYS,AMSTERDAM,NETHERLANDS

[2] NEDERLANDSE PHILIPS BEDRIJVEN BV,PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.93834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1037 / 1039

页数：3

共 13 条

[1]

BEAN JC, 1981, IMPURITY DOPING

[2]

CARASSO MG, 1982, PHILIPS TECH REV, V40, P150

[3] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843

[4] LASER PROCESSING OF UHV-DEPOSITED THIN SILICON FILMS [J].

DEJONG, T ;

SMIT, L ;

KORABLEV, VV ;

TROMP, RM ;

SARIS, FW .

APPLIED SURFACE SCIENCE, 1982, 10 (01) :10-20

[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[6] HETEROEPITAXIAL GROWTH OF GAP ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

GONDA, SI ;

MATSUSHIMA, Y ;

MUKAI, S ;

MAKITA, Y ;

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1043-1048

[7] HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

KAWANAMI, H ;

SAKAMOTO, T ;

TAKAHASHI, T ;

SUZUKI, E ;

NAGAI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L68-L70

[8] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11) :1535-1537

[9] HETEROSTRUCTURES FOR EVERYTHING - DEVICE PRINCIPLE OF THE 1980S [J].

KROEMER, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :9-13

[10] ATOMIC-STRUCTURE OF GAP (110) AND (111) FACES [J].

LEE, BW ;

NI, RK ;

MASUD, N ;

WANG, XR ;

WANG, DC ;

ROWE, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :294-300

← 1 2 →