HETEROSTRUCTURES FOR EVERYTHING - DEVICE PRINCIPLE OF THE 1980S

[1] DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (01) : 41 - 42

[2] DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1160 - 1164

[3] BENEKING H, 1976, ELECTRON LETT, V12, P375

[4] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[5] SEMICONDUCTOR SUPER-LATTICES BY MBE AND THEIR CHARACTERIZATION [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) : 3 - 14

[6] CLARK BW, 1975, GALLIUM ARSENIDE REL, V24, P373

[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[8] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[9] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471

[10] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186

[1] DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1980, 16 (01) : 41 - 42

[2] DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1160 - 1164

[3] BENEKING H, 1976, ELECTRON LETT, V12, P375

[4] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1141 - 1147

[5] SEMICONDUCTOR SUPER-LATTICES BY MBE AND THEIR CHARACTERIZATION [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) : 3 - 14

[6] CLARK BW, 1975, GALLIUM ARSENIDE REL, V24, P373

[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[8] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[9] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471

[10] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186