ATOMIC-STRUCTURE OF GAP (110) AND (111) FACES

被引：16

作者：

LEE, BW

NI, RK

MASUD, N

WANG, XR

WANG, DC

ROWE, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：294 / 300

页数：7

共 21 条

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[5] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
[7] SURFACE AND NEAR-SURFACE ATOMIC-STRUCTURE OF GAAS (110)
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SO, E
MARK, P
DUKE, CB
MEYER, RJ
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