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LASER PROCESSING OF UHV-DEPOSITED THIN SILICON FILMS
被引:12
作者
:
DEJONG, T
论文数:
0
引用数:
0
h-index:
0
DEJONG, T
SMIT, L
论文数:
0
引用数:
0
h-index:
0
SMIT, L
KORABLEV, VV
论文数:
0
引用数:
0
h-index:
0
KORABLEV, VV
TROMP, RM
论文数:
0
引用数:
0
h-index:
0
TROMP, RM
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
SARIS, FW
机构
:
来源
:
APPLIED SURFACE SCIENCE
|
1982年
/ 10卷
/ 01期
关键词
:
D O I
:
10.1016/0378-5963(82)90130-1
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:10 / 20
页数:11
相关论文
共 20 条
[1]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[2]
SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
BEAN, JC
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
LEAMY, HJ
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
POATE, JM
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
ROZGONYI, GA
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
VANDERZIEL, JP
WILLIAMS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WILLIAMS, JS
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
CELLER, GK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 881
-
885
[3]
ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
Space Sciences Laboratory, Department of Nuclear Engineering, University of California, Berkeley
BEDAIR, SM
SMITH, HP
论文数:
0
引用数:
0
h-index:
0
机构:
Space Sciences Laboratory, Department of Nuclear Engineering, University of California, Berkeley
SMITH, HP
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4776
-
&
[4]
SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CELLER, GK
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POATE, JM
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KIMERLING, LC
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(08)
: 464
-
466
[5]
CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
WEBBER, HC
论文数:
0
引用数:
0
h-index:
0
WEBBER, HC
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 547
-
550
[6]
DAVIES LE, 1976, HDB AUGER ELECTRON S
[7]
DEJONG T, 1981, NOV P MAT RES SOC M
[8]
DOPING SUPER-LATTICES
DOHLER, GH
论文数:
0
引用数:
0
h-index:
0
DOHLER, GH
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979,
16
(03):
: 851
-
856
[9]
LONG JOURNEY INTO TUNNELING
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
[J].
REVIEWS OF MODERN PHYSICS,
1974,
46
(02)
: 237
-
244
[10]
LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
FOTI, G
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
CAMPISANO, SU
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
RIMINI, E
VITALI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
VITALI, G
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
: 2569
-
2571
←
1
2
→
共 20 条
[1]
MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
BAERI, P
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
BAERI, P
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
CAMPISANO, SU
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
FOTI, G
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
Istituto di Struttura della Materia dell'Universitá, I95129 Catania, Corso Italia
RIMINI, E
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 788
-
797
[2]
SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
BEAN, JC
LEAMY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
LEAMY, HJ
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
POATE, JM
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
ROZGONYI, GA
VANDERZIEL, JP
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
VANDERZIEL, JP
WILLIAMS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WILLIAMS, JS
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540
CELLER, GK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 881
-
885
[3]
ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
Space Sciences Laboratory, Department of Nuclear Engineering, University of California, Berkeley
BEDAIR, SM
SMITH, HP
论文数:
0
引用数:
0
h-index:
0
机构:
Space Sciences Laboratory, Department of Nuclear Engineering, University of California, Berkeley
SMITH, HP
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4776
-
&
[4]
SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CELLER, GK
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POATE, JM
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KIMERLING, LC
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(08)
: 464
-
466
[5]
CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON
CULLIS, AG
论文数:
0
引用数:
0
h-index:
0
CULLIS, AG
WEBBER, HC
论文数:
0
引用数:
0
h-index:
0
WEBBER, HC
CHEW, NG
论文数:
0
引用数:
0
h-index:
0
CHEW, NG
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(07)
: 547
-
550
[6]
DAVIES LE, 1976, HDB AUGER ELECTRON S
[7]
DEJONG T, 1981, NOV P MAT RES SOC M
[8]
DOPING SUPER-LATTICES
DOHLER, GH
论文数:
0
引用数:
0
h-index:
0
DOHLER, GH
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979,
16
(03):
: 851
-
856
[9]
LONG JOURNEY INTO TUNNELING
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ESAKI, L
[J].
REVIEWS OF MODERN PHYSICS,
1974,
46
(02)
: 237
-
244
[10]
LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON
FOTI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
FOTI, G
CAMPISANO, SU
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
CAMPISANO, SU
RIMINI, E
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
RIMINI, E
VITALI, G
论文数:
0
引用数:
0
h-index:
0
机构:
IST FIS INGN, I-100100 ROMA, ITALY
IST FIS INGN, I-100100 ROMA, ITALY
VITALI, G
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
: 2569
-
2571
←
1
2
→