CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (18) : 1246 - 1249

[3] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[4] STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 259 - 265

[5] Bicknell R. W., 1970, European conference on ion implantation, P57

[6] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[7] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 41 - 49

[8] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08): : 688 - 689

[9] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[10] HILL C, 1979, LASER SOLID INTERACT, P419

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (18) : 1246 - 1249

[3] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[4] STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 259 - 265

[5] Bicknell R. W., 1970, European conference on ion implantation, P57

[6] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[7] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN): : 41 - 49

[8] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08): : 688 - 689

[9] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[10] HILL C, 1979, LASER SOLID INTERACT, P419