TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS

被引：23

作者：

CULLIS, AG ^{[1
]}

WEBBER, HC ^{[1
]}

POATE, JM ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00244.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

收藏

页码：41 / 49

页数：9

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