STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATION

被引：16

作者：

BERTOLOTTI, M ^{[1
]}

VITALI, G ^{[1
]}

RIMINI, E ^{[1
]}

FOTI, G ^{[1
]}

机构：

[1] UNIV CORSO ITALIA,IST FIS,I-95129 CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An amorphous to a polycrystal or a single-crystal transition by ruby-laser irradiation of amorphous Si, obtained through ion implantation, is discussed. Both free-generation and Q-switched laser mode operation are used. Under a free-generation operation only the amorphous to polycrystal transition is obtained, which is attributed to nonthermal effects. In the Q-switched mode both transitions are obtained. The single-crystal transition is interpreted as due mainly to the melting of the amorphous layer.

引用

页码：259 / 265

页数：7

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