EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES

被引：53

作者：

INOUE, K ^{[1
]}

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

YOSHIOKA, Y ^{[1
]}

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：973 / 975

页数：3

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共 12 条

[1] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735
[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
DRUMMOND, TJ
KLEM, J
ARNOLD, D
FISCHER, R
THORNE, RE
LYONS, WG
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[3] HEIBLUM M, 1984, APPL PHYS LETT, V44, P1064, DOI 10.1063/1.94644
[4] HEIBLUM M, UNPUB J VAC SCI TECH
[5] HEIBLUM M, 1984, 3RD INT C MOL BEAM E, P38
[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
INOUE, K
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
[7] INOUE K, 1984, JPN J APPL PHYS, V23, pL769
[8] KINOSHITA S, 1984, 3RD INT C MOL BEAM E, P53
[9] IMPROVED GAAS/AIGAAS SINGLE QUANTUM WELLS THROUGH THE USE OF THIN SUPERLATTICE BUFFERS
MASSELINK, WT
KLEIN, MV
SUN, YL
CHANG, YC
FISCHER, R
DRUMMOND, TJ
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 435 - 437
[10] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES
PETROFF, PM
GOSSARD, AC
WIEGMANN, W
SAVAGE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 5 - 13