MODELING THE MESFET OUTPUT NONLINEARITY

被引：2

作者：

MINASIAN, RA

机构：

[1] Department of Electrical Engineering, University of Melbourne, Parkville

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 17期

关键词：

Metal-semiconductor field-effect transistors; Modelling;

D O I：

10.1049/el:19790372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conditions governing the modelling of transductance and drain-conductance nonlinearities from measured data are investigated. A simple representation for regions close to pinch-off, corresponding to mixer operation, is obtained. Results of the modelling are compared to measurements on a typical 1 µm gate length m.e.s.f.e.t. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：515 / 516

页数：2