INFLUENCE OF LEAKAGE CURRENTS BETWEEN ELECTRODES IN TUNABLE DBR-LASERS

被引：1

作者：

OBERG, M

NILSSON, S

HOLMBERG, B

KLINGA, T

BROBERG, B

机构：

[1] Swedish Institute of Microelectronics, S-164 21, Kista

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Semiconductor lasers;

D O I：

10.1049/el:19900705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wavelength tunable multi-section DBR lasers have been fabricated on a p-doped InP substrate by LPE. Maximum output power is 10-5 mW and largest step-wise tuning range is 51 nm for a single-sided DBR laser. A double-sided laser has a continuous tuning range of l-4nm. It is shown that the low electrical isolation between the top contacts causes lower output power and a significantly larger laser linewidth. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1089 / 1090

页数：2

共 6 条

[1] EXPERIMENTAL-DETERMINATION OF CARRIER-INDUCED DIFFERENTIAL LOSS IN 2-SECTION GAINASP-INP LASER-WAVEGUIDE [J].