HIGH-EFFICIENCY INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASERS AT 1.55 MU-M

被引：7

作者：

WAKAO, K

KIHARA, K

KOTAKI, Y

KUSUNOKI, T

SUDO, H

ISOZUMI, S

YAMAKOSHI, S

ISHIKAWA, H

IMAI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2153 / 2154

页数：2

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共 8 条

[1] EXTREMELY LOW THRESHOLD CURRENT 1.52-MU-M INGAASP/INP MS-DFB LASERS WITH 2ND-ORDER GRATING
BURKHARD, H
KUPHAL, E
DINGES, HW
[J]. ELECTRONICS LETTERS, 1986, 22 (15) : 802 - 803
[2] ANALYSIS OF LEAKAGE CURRENTS IN 1.3-MU-M INGAASP REAL-INDEX-GUIDED LASERS
DUTTA, NK
WILT, DP
NELSON, RJ
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (03) : 201 - 208
[3] EFFECT OF ACTIVE LAYER PLACEMENT ON THE THRESHOLD CURRENT OF 1.3-MU-M INGAASP ETCHED MESA BURIED HETEROSTRUCTURE LASERS
DUTTA, NK
NELSON, RJ
WILSON, RB
MAHER, DM
WRIGHT, PD
SHENG, TT
LIN, PSD
MARCUS, RB
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 337 - 339
[4] Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10
[5] HIGH LIGHT OUTPUT-POWER SINGLE-LONGITUDINAL-MODE SEMICONDUCTOR-LASER DIODES
KOBAYASHI, K
MITO, I
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1202 - 1210
[6] INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT
MITO, I
KITAMURA, M
KAEDE, K
ODAGIRI, Y
SEKI, M
SUGIMOTO, M
KOBAYASHI, K
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 2 - 3
[7] SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA-EX IN 1-3 MU-M INGAASP DH LASERS
NAMIZAKI, H
HIRANO, R
HIGUCHI, H
OOMURA, E
SAKAKIBARA, Y
SUSAKI, W
[J]. ELECTRONICS LETTERS, 1982, 18 (16) : 703 - 704
[8] SUFFICIENTLY SIDE-MODE-SUPPRESSED HIGH-OUTPUT-POWER 1.5 MU-M DFB LASERS
YOSHIDA, J
ITAYA, Y
NOGUCHI, Y
MATSUOKA, T
NAKANO, Y
[J]. ELECTRONICS LETTERS, 1986, 22 (06) : 327 - 328